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Other articles related with "strained Si"：
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118501 |
Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌) |
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Analytical threshold voltage model for strained silicon GAA-TFET |
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Chin. Phys. B
2016 Vol.25 (11): 118501-118501
[Abstract]
(703)
[HTML 0 KB]
[PDF 354 KB]
(302)
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38502 |
Yan-hui Xin(辛艳辉), Sheng Yuan(袁胜), Ming-tang Liu(刘明堂),Hong-xia Liu(刘红侠), He-cai Yuan(袁合才) |
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Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs |
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Chin. Phys. B
2016 Vol.25 (3): 38502-038502
[Abstract]
(675)
[HTML 1 KB]
[PDF 339 KB]
(303)
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36801 |
Sun Gao-Di (孙高迪), Dong Lin-Xi (董林玺), Xue Zhong-Ying (薛忠营), Chen Da (陈达), Guo Qing-Lei (郭庆磊), Mu Zhi-Qiang (母志强) |
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Strain analysis of free-standing strained silicon-on-insulator nanomembrane |
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Chin. Phys. B
2015 Vol.24 (3): 36801-036801
[Abstract]
(657)
[HTML 0 KB]
[PDF 439 KB]
(536)
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66103 |
Sun Jia-Bao (孙家宝), Tang Xiao-Yu (唐晓雨), Yang Zhou-Wei (杨周伟), Shi Yi (施毅), Zhao Yi (赵毅) |
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Retarded thermal oxidation of strained Si substrate |
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Chin. Phys. B
2014 Vol.23 (6): 66103-066103
[Abstract]
(542)
[HTML 1 KB]
[PDF 867 KB]
(412)
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127101 |
Kuang Qian-Wei(匡潜玮), Liu Hong-Xia(刘红侠), Wang Shu-Long(王树龙), Qin Shan-Shan(秦珊珊), and Wang Zhi-Lin(王志林) |
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Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k·p theory |
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Chin. Phys. B
2011 Vol.20 (12): 127101-127101
[Abstract]
(1534)
[HTML 1 KB]
[PDF 585 KB]
(3971)
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117309 |
Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌) |
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An analytical threshold voltage model for dual-strained channel PMOSFET |
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Chin. Phys. B
2010 Vol.19 (11): 117309-117309
[Abstract]
(1201)
[HTML 0 KB]
[PDF 694 KB]
(880)
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107301 |
Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博) |
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The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs |
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Chin. Phys. B
2010 Vol.19 (10): 107301-107301
[Abstract]
(1358)
[HTML 1 KB]
[PDF 873 KB]
(703)
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3827 |
Song Jian-Jun(宋建军), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), and Xuan Rong-Xi(宣荣喜) |
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Determination of conduction band edge characteristics of strained Si/Si1-xGex |
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Chin. Phys. B
2007 Vol.16 (12): 3827-3831
[Abstract]
(1764)
[HTML 0 KB]
[PDF 434 KB]
(3411)
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1339 |
Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英) |
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Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel |
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Chin. Phys. B
2006 Vol.15 (6): 1339-1345
[Abstract]
(1803)
[HTML 0 KB]
[PDF 294 KB]
(651)
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